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Yu, S.-W. ; Müller, N. ; Heinzmann, U. ; Pettenkofer, C. ; Klein, Andreas ; Blaha, P. (2022):
Band symmetries of GaSe(0001) studied by spin-resolved electron spectroscopy using circularly polarized radiation. (Publisher's Version)
In: Physical Review B, 69 (4), American Physical Society, ISSN 2469-9950, e-ISSN 2469-9969,
DOI: 10.26083/tuprints-00021100,
[Article]
Klein, Andreas ; Tiefenbacher, S. ; Eyert, V. ; Pettenkofer, C. ; Jaegermann, Wolfram (2022):
Electronic band structure of single-crystal and single-layer WS₂: Influence of interlayer van der Waals interactions. (Publisher's Version)
In: Physical Review B, 64 (20), American Physical Society, ISSN 2469-9950, e-ISSN 2469-9969,
DOI: 10.26083/tuprints-00021167,
[Article]
Klein, Andreas ; Lang, O. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, Wolfram (2022):
Electronically Decoupled Films of InSe Prepared by van der Waals Epitaxy: Localized and Delocalized Valence States. (Publisher's Version)
In: Physical Review Letters, 80 (2), pp. 361-364. American Physical Society, ISSN 0031-9007, e-ISSN 1079-7114,
DOI: 10.26083/tuprints-00021182,
[Article]
Schlaf, R. ; Klein, Andreas ; Pettenkofer, C. ; Jaegermann, Wolfram (2022):
Laterally inhomogeneous surface-potential distribution and photovoltage at clustered In/WSe₂(0001) interfaces. (Publisher's Version)
In: Physical Review B, 48 (19), pp. 14242-14252. American Physical Society, ISSN 2469-9950, e-ISSN 2469-9969,
DOI: 10.26083/tuprints-00021172,
[Article]
Klein, Andreas ; Löher, T. ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, Wolfram (2021):
Band lineup between CdS and ultra high vacuum-cleaved CuInS₂ single crystals. (Publisher's Version)
In: Applied Physics Letters, 70 (10), pp. 1299-1301. AIP Publishing, ISSN 0003-6951, e-ISSN 1077-3118,
DOI: 10.26083/tuprints-00019832,
[Article]
Klein, Andreas ; Löher, Thomas ; Pettenkofer, C. ; Jaegermann, Wolfram (2021):
Chemical interaction of Na with cleaved (011) surfaces of CuInSe₂. (Publisher's Version)
In: Journal of Applied Physics, 80 (9), pp. 5039-5043. AIP Publishing, ISSN 0021-8979, e-ISSN 1089-7550,
DOI: 10.26083/tuprints-00019909,
[Article]
Fritsche, R. ; Wisotzki, E. ; Islam, A. B. M. O. ; Thissen, A. ; Klein, Andreas ; Jaegermann, Wolfram ; Rudolph, R. ; Tonti, D. ; Pettenkofer, C. (2021):
Electronic passivation of Si(111) by Ga–Se half-sheet termination. (Publisher's Version)
In: Applied Physics Letters, 80 (8), pp. 1388-1390. AIP Publishing, ISSN 0003-6951, e-ISSN 1077-3118,
DOI: 10.26083/tuprints-00019835,
[Article]
Löher, T. ; Tomm, Y. ; Klein, Andreas ; Su, D. ; Pettenkofer, C. ; Jaegermann, Wolfram (2021):
Highly oriented layers of the three‐dimensional semiconductor CdTe on the two‐dimensional layered semiconductors MoTe₂ and WSe₂. (Publisher's Version)
In: Journal of Applied Physics, 80 (10), pp. 5718-5722. AIP Publishing, ISSN 0021-8979, e-ISSN 1089-7550,
DOI: 10.26083/tuprints-00019932,
[Article]
Löher, T. ; Tomm, Y. ; Klein, Andreas ; Su, D. ; Pettenkofer, C. ; Jaegermann, Wolfram (2021):
Highly oriented layers of the three‐dimensional semiconductor CdTe on the two‐dimensional layered semiconductors MoTe₂ and WSe₂. (Publisher's Version)
In: Journal of Applied Physics, 80 (10), pp. 5718-5722. AIP Publishing, ISSN 0021-8979, e-ISSN 1089-7550,
DOI: 10.26083/tuprints-00019923,
[Article]
Löher, T. ; Klein, Andreas ; Pettenkofer, C. ; Jaegermann, Wolfram (2021):
Partial density of states in the CuInSe₂ valence bands. (Publisher's Version)
In: Journal of Applied Physics, 81 (12), pp. 7806-7809. AIP Publishing, ISSN 0021-8979, e-ISSN 1089-7550,
DOI: 10.26083/tuprints-00019929,
[Article]
Lang, O. ; Pettenkofer, C. ; Sánchez-Royo, Juan Francisco ; Segura, Alfredo ; Klein, Andreas ; Jaegermann, Wolfram (2021):
Thin film growth and band lineup of In₂O₃ on the layered semiconductor InSe. (Publisher's Version)
In: Journal of Applied Physics, 86 (10), pp. 5687-5691. AIP Publishing, ISSN 0021-8979, e-ISSN 1089-7550,
DOI: 10.26083/tuprints-00019939,
[Article]
Rudolph, R. ; Tomm, Y. ; Pettenkofer, C. ; Klein, Andreas ; Jaegermann, Wolfram (2021):
Van der Waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110). (Publisher's Version)
In: Applied Physics Letters, 76 (9), pp. 1101-1103. AIP Publishing, ISSN 0003-6951, e-ISSN 1077-3118,
DOI: 10.26083/tuprints-00019887,
[Article]