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Band lineup between CdS and ultra high vacuum-cleaved CuInS₂ single crystals

Klein, Andreas ; Löher, T. ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, Wolfram (2021):
Band lineup between CdS and ultra high vacuum-cleaved CuInS₂ single crystals. (Publisher's Version)
In: Applied Physics Letters, 70 (10), pp. 1299-1301. AIP Publishing, ISSN 0003-6951, e-ISSN 1077-3118,
DOI: 10.26083/tuprints-00019832,
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Item Type: Article
Origin: Secondary publication service
Status: Publisher's Version
Title: Band lineup between CdS and ultra high vacuum-cleaved CuInS₂ single crystals
Language: English
Abstract:

The interface formation between vacuum evaporated CdS and ultrahigh vacuum-cleaved CuInS₂ single crystals has been studied by synchrotron excited photoelectron spectroscopy. The valence band discontinuity is determined directly from valence band difference spectra to be DEV 50.6 (60.1) eV. This value is significantly smaller than for other preparation conditions given in the literature and evidently not suitable for solar cell applications. The similarity to observations at the CdS/CuInSe₂ interfaces suggests that neutrality levels play a dominant role in establishing the band lineup at interfaces containing chalcopyrite semiconductors.

Journal or Publication Title: Applied Physics Letters
Journal volume: 70
Number: 10
Publisher: AIP Publishing
Classification DDC: 500 Naturwissenschaften und Mathematik > 530 Physik
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 08 Nov 2021 12:07
Last Modified: 08 Nov 2021 12:07
DOI: 10.26083/tuprints-00019832
Corresponding Links:
URN: urn:nbn:de:tuda-tuprints-198325
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19832
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