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Thin film growth and band lineup of In₂O₃ on the layered semiconductor InSe

Lang, O. ; Pettenkofer, C. ; Sánchez-Royo, Juan Francisco ; Segura, Alfredo ; Klein, Andreas ; Jaegermann, Wolfram (2021):
Thin film growth and band lineup of In₂O₃ on the layered semiconductor InSe. (Publisher's Version)
In: Journal of Applied Physics, 86 (10), pp. 5687-5691. AIP Publishing, ISSN 0021-8979, e-ISSN 1089-7550,
DOI: 10.26083/tuprints-00019939,
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Item Type: Article
Origin: Secondary publication service
Status: Publisher's Version
Title: Thin film growth and band lineup of In₂O₃ on the layered semiconductor InSe
Language: English
Abstract:

Thin films of the transparent conducting oxide In₂O₃ have been prepared in ultrahigh vacuum by reactive evaporation of indium. X-ray diffraction, optical, and electrical measurements were used to characterize properties of films deposited on transparent insulating mica substrates under variation of the oxygen pressure. Photoelectron spectroscopy was used to investigate in situ the interface formation between In₂O₃ and the layered semiconductor InSe.

Journal or Publication Title: Journal of Applied Physics
Journal volume: 86
Number: 10
Publisher: AIP Publishing
Classification DDC: 500 Naturwissenschaften und Mathematik > 530 Physik
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 17 Nov 2021 13:27
Last Modified: 17 Nov 2021 13:28
DOI: 10.26083/tuprints-00019939
Corresponding Links:
URN: urn:nbn:de:tuda-tuprints-199393
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19939
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