TU Darmstadt / ULB / TUprints

Van der Waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110)

Rudolph, R. ; Tomm, Y. ; Pettenkofer, C. ; Klein, Andreas ; Jaegermann, Wolfram (2021):
Van der Waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110). (Publisher's Version)
In: Applied Physics Letters, 76 (9), pp. 1101-1103. AIP Publishing, ISSN 0003-6951, e-ISSN 1077-3118,
DOI: 10.26083/tuprints-00019887,
[Article]

[img]
Preview
Text
19-1.125951.pdf
Available under only the rights of use according to UrhG.

Download (895kB) | Preview
Item Type: Article
Origin: Secondary publication service
Status: Publisher's Version
Title: Van der Waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110)
Language: English
Abstract:

The growth of the layered chalcogenide GaSe on cleaved GaAs(110) surfaces was investigated with photoemission and low-energy electron diffraction (LEED). GaSe films grow with their c axis perpendicular to the GaAs(110) surface. LEED patterns after initial film growth are a superposition of rectangular GaAs:Se spots and two hexagonal domains rotated by ±5° with respect to the GaAs ⟨001⟩ axis. At higher film thickness a hexagonal LEED pattern with GaSe〈120〉 ‖ GaAs 〈001〉 is obtained.

Journal or Publication Title: Applied Physics Letters
Journal volume: 76
Number: 9
Publisher: AIP Publishing
Classification DDC: 500 Naturwissenschaften und Mathematik > 530 Physik
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 12 Nov 2021 13:45
Last Modified: 12 Nov 2021 13:45
DOI: 10.26083/tuprints-00019887
Corresponding Links:
URN: urn:nbn:de:tuda-tuprints-198872
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19887
Export:
Actions (login required)
View Item View Item