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Electronic passivation of Si(111) by Ga–Se half-sheet termination

Fritsche, R. ; Wisotzki, E. ; Islam, A. B. M. O. ; Thissen, A. ; Klein, Andreas ; Jaegermann, Wolfram ; Rudolph, R. ; Tonti, D. ; Pettenkofer, C. (2021):
Electronic passivation of Si(111) by Ga–Se half-sheet termination. (Publisher's Version)
In: Applied Physics Letters, 80 (8), pp. 1388-1390. AIP Publishing, ISSN 0003-6951, e-ISSN 1077-3118,
DOI: 10.26083/tuprints-00019835,
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Item Type: Article
Origin: Secondary publication service
Status: Publisher's Version
Title: Electronic passivation of Si(111) by Ga–Se half-sheet termination
Language: English
Abstract:

A Si(111):GaSe van der Waals surface is prepared using sequential deposition of Ga and Se at elevated temperature on a Si(111)-7×7 surface. Surface properties were investigated by soft x-ray photoelectron spectroscopy and low-energy electron diffraction. The Si(111)-1×1:GaSe surface remains with electronic surface potentials near flatband condition.

Journal or Publication Title: Applied Physics Letters
Journal volume: 80
Number: 8
Publisher: AIP Publishing
Classification DDC: 500 Naturwissenschaften und Mathematik > 530 Physik
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 08 Nov 2021 12:11
Last Modified: 08 Nov 2021 12:11
DOI: 10.26083/tuprints-00019835
Corresponding Links:
URN: urn:nbn:de:tuda-tuprints-198355
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19835
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