Browse by Person
Up a level |
Article
Petzold, Stefan ; Zintler, Alexander ; Eilhardt, Robert ; Piros, Eszter ; Kaiser, Nico ; Sharath, Sankaramangalam Ulhas ; Vogel, Tobias ; Major, Márton ; McKenna, Keith Patrick ; Molina‐Luna, Leopoldo ; Alff, Lambert (2024)
Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices.
In: Advanced Electronic Materials, 2019, 5 (10)
doi: 10.26083/tuprints-00017041
Article, Secondary publication, Publisher's Version
Winkler, Robert ; Zintler, Alexander ; Petzold, Stefan ; Piros, Eszter ; Kaiser, Nico ; Vogel, Tobias ; Nasiou, Déspina ; McKenna, Keith P. ; Molina‐Luna, Leopoldo ; Alff, Lambert (2023)
Controlling the Formation of Conductive Pathways in Memristive Devices.
In: Advanced Science, 2022, 9 (33)
doi: 10.26083/tuprints-00023711
Article, Secondary publication, Publisher's Version
Zintler, Alexander ; Eilhardt, Robert ; Petzold, Stefan ; Sharath, Sankaramangalam Ulhas ; Bruder, Enrico ; Kaiser, Nico ; Alff, Lambert ; Molina-Luna, Leopoldo (2022)
Enhanced Conductivity and Microstructure in Highly Textured TiN1–x/c-Al2O3 Thin Films.
In: ACS Omega, 2022, 7 (2)
doi: 10.26083/tuprints-00021222
Article, Secondary publication, Publisher's Version
Petzold, Stefan ; Piros, Eszter ; Sharath, Sankaramangalam Ulhas ; Zintler, Alexander ; Hildebrandt, Erwin ; Molina-Luna, Leopoldo ; Wenger, Christian ; Alff, Lambert (2021)
Gradual reset and set characteristics in yttrium oxide based resistive random access memory.
In: Semiconductor Science and Technology, 2021, 34 (7)
doi: 10.26083/tuprints-00019328
Article, Secondary publication, Publisher's Version
Schäfer, Nils ; Karabas, Nail ; Palakkal, Jasnamol Pezhumkattil ; Petzold, Stefan ; Major, Marton ; Pietralla, Norbert ; Alff, Lambert (2021)
Kinetically induced low-temperature synthesis of Nb₃Sn thin films.
In: Journal of Applied Physics, 2021, 128 (13)
doi: 10.26083/tuprints-00019408
Article, Secondary publication, Publisher's Version
Ph.D. Thesis
Petzold, Stefan (2020)
Defect Engineering in Transition Metal Oxide-based Resistive Random Access Memory.
Technische Universität Darmstadt
doi: 10.25534/tuprints-00011328
Ph.D. Thesis, Primary publication