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Gradual reset and set characteristics in yttrium oxide based resistive random access memory

Petzold, Stefan ; Piros, Eszter ; Sharath, Sankaramangalam Ulhas ; Zintler, Alexander ; Hildebrandt, Erwin ; Molina-Luna, Leopoldo ; Wenger, Christian ; Alff, Lambert (2021):
Gradual reset and set characteristics in yttrium oxide based resistive random access memory. (Publisher's Version)
In: Semiconductor Science and Technology, 34 (7), IOP Publishing, ISSN 0268-1242, e-ISSN 1361-6641,
DOI: 10.26083/tuprints-00019328,
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Item Type: Article
Origin: Secondary publication via sponsored Golden Open Access
Status: Publisher's Version
Title: Gradual reset and set characteristics in yttrium oxide based resistive random access memory
Language: English
Abstract:

This paper addresses the resistive switching behavior in yttrium oxide based resistive random access memory (RRAM) (TiN/yttrium oxide/Pt) devices. We report the coexistence of bipolar and unipolar resistive switching within a single device stack. For bipolar DC operation, the devices show gradual set and reset behavior with resistance ratio up to two orders of magnitude. By using nanosecond regime pulses (20 to 100 ns pulse width) of constant voltage amplitude, this gradual switching behavior could be utilized in tuning the resistance during set and reset spanning up to two orders of magnitude. This demonstrates that yttrium oxide based RRAM devices are alternative candidates for multibit operations and neuromorphic applications.

Journal or Publication Title: Semiconductor Science and Technology
Journal volume: 34
Number: 7
Publisher: IOP Publishing
Collation: 6 Seiten
Classification DDC: 600 Technik, Medizin, angewandte Wissenschaften > 600 Technik
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
Date Deposited: 06 Sep 2021 12:09
Last Modified: 06 Sep 2021 12:09
DOI: 10.26083/tuprints-00019328
Corresponding Links:
URN: urn:nbn:de:tuda-tuprints-193289
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19328
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