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Passive mode-locking of p-doped quantum dot semiconductor lasers

Auth, D. ; Korenev, V. V. ; Savelyev, A. V. ; Maximov, M. V. ; Zhukov, A. E. ; Breuer, S. (2024)
Passive mode-locking of p-doped quantum dot semiconductor lasers.
In: Journal of Physics: Conference Series, 2020, 1695
doi: 10.26083/tuprints-00021324
Article, Secondary publication, Publisher's Version

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Item Type: Article
Type of entry: Secondary publication
Title: Passive mode-locking of p-doped quantum dot semiconductor lasers
Language: English
Date: 29 July 2024
Place of Publication: Darmstadt
Year of primary publication: 2020
Place of primary publication: Bristol
Publisher: IOP Publishing
Journal or Publication Title: Journal of Physics: Conference Series
Volume of the journal: 1695
Collation: 6 Seiten
DOI: 10.26083/tuprints-00021324
Corresponding Links:
Origin: Secondary publication DeepGreen
Abstract:

Quantum dot based monolithic edge-emitting semiconductor lasers at 1.25 µm are ideal sources for the generation of broad optical frequency combs for optical communication applications. In this work, InAs/InGaAs quantum dot lasers with different total laser length to absorber length ratio and with different p-doping concentrations in the GaAs barrier sections are investigated experimentally in dependence on the gain injection current and absorber reverse bias voltage. A smaller mode-locking area is found for the p-doped device in dependence on the laser biasing conditions. For the undoped active region 1.3 ps short pulse widths at a pulse repetition rate of 20 GHz with a pulse-to-pulse timing jitter of 111 fs are reported for an absorber section length of 12% to the total cavity length. For an undoped and p-doped device short pulse emission between 2.5 ps and 5.5 ps is attained and a shorter absorber section length of 8% or 5%.

Identification Number: Artikel-ID: 012068
Status: Publisher's Version
URN: urn:nbn:de:tuda-tuprints-213241
Additional Information:

7th International School and Conference "Saint Petersburg OPEN 2020": Optoelectronics, Photonics, Engineering and Nanostructures April 27-30, 2020, Saint Petersburg, Russian Federation

Classification DDC: 500 Science and mathematics > 530 Physics
Divisions: 05 Department of Physics > Institute of Applied Physics
Date Deposited: 29 Jul 2024 09:45
Last Modified: 24 Sep 2024 11:11
SWORD Depositor: Deep Green
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/21324
PPN: 521674077
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