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Changes in Electronic Structure and Chemical Bonding upon Crystallization of the Phase Change Material GeSb₂Te₄

Klein, Andreas ; Dieker, H. ; Späth, B. ; Fons, P. ; Kolobov, A. ; Steimer, C. ; Wuttig, M. (2022)
Changes in Electronic Structure and Chemical Bonding upon Crystallization of the Phase Change Material GeSb₂Te₄.
In: Physical Review Letters, 2008, 100 (1)
doi: 10.26083/tuprints-00021181
Article, Secondary publication, Publisher's Version

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Item Type: Article
Type of entry: Secondary publication
Title: Changes in Electronic Structure and Chemical Bonding upon Crystallization of the Phase Change Material GeSb₂Te₄
Language: English
Date: 2022
Place of Publication: Darmstadt
Year of primary publication: 2008
Publisher: American Physical Society
Journal or Publication Title: Physical Review Letters
Volume of the journal: 100
Issue Number: 1
Collation: 4 Seiten
DOI: 10.26083/tuprints-00021181
Corresponding Links:
Origin: Secondary publication service
Abstract:

High-resolution photoelectron spectroscopy of in situ prepared films of GeSb₂Te₄ reveals significant differences in electronic and chemical structure between the amorphous and the crystalline phase. Evidence for two different chemical environments of Ge and Sb in the amorphous structure is found. This observation can explain the pronounced property contrast between both phases and provides new insight into the formation of the amorphous state.

Status: Publisher's Version
URN: urn:nbn:de:tuda-tuprints-211814
Classification DDC: 500 Science and mathematics > 530 Physics
600 Technology, medicine, applied sciences > 620 Engineering and machine engineering
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 22 Apr 2022 11:08
Last Modified: 09 Feb 2023 10:37
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/21181
PPN: 504466828
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