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Thin film growth and band lineup of In₂O₃ on the layered semiconductor InSe

Lang, O. ; Pettenkofer, C. ; Sánchez-Royo, Juan Francisco ; Segura, Alfredo ; Klein, Andreas ; Jaegermann, Wolfram (2021)
Thin film growth and band lineup of In₂O₃ on the layered semiconductor InSe.
In: Journal of Applied Physics, 1999, 86 (10)
doi: 10.26083/tuprints-00019939
Article, Secondary publication, Publisher's Version

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Item Type: Article
Type of entry: Secondary publication
Title: Thin film growth and band lineup of In₂O₃ on the layered semiconductor InSe
Language: English
Date: 2021
Place of Publication: Darmstadt
Year of primary publication: 1999
Publisher: AIP Publishing
Journal or Publication Title: Journal of Applied Physics
Volume of the journal: 86
Issue Number: 10
DOI: 10.26083/tuprints-00019939
Corresponding Links:
Origin: Secondary publication service
Abstract:

Thin films of the transparent conducting oxide In₂O₃ have been prepared in ultrahigh vacuum by reactive evaporation of indium. X-ray diffraction, optical, and electrical measurements were used to characterize properties of films deposited on transparent insulating mica substrates under variation of the oxygen pressure. Photoelectron spectroscopy was used to investigate in situ the interface formation between In₂O₃ and the layered semiconductor InSe.

Status: Publisher's Version
URN: urn:nbn:de:tuda-tuprints-199393
Classification DDC: 500 Science and mathematics > 530 Physics
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 17 Nov 2021 13:27
Last Modified: 02 Feb 2023 09:09
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19939
PPN: 504218980
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