TU Darmstadt / ULB / TUprints

Van der Waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110)

Rudolph, R. ; Tomm, Y. ; Pettenkofer, C. ; Klein, Andreas ; Jaegermann, Wolfram (2021)
Van der Waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110).
In: Applied Physics Letters, 2000, 76 (9)
doi: 10.26083/tuprints-00019887
Article, Secondary publication, Publisher's Version

[img]
Preview
Text
19-1.125951.pdf
Copyright Information: In Copyright.

Download (895kB) | Preview
Item Type: Article
Type of entry: Secondary publication
Title: Van der Waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110)
Language: English
Date: 2021
Place of Publication: Darmstadt
Year of primary publication: 2000
Publisher: AIP Publishing
Journal or Publication Title: Applied Physics Letters
Volume of the journal: 76
Issue Number: 9
DOI: 10.26083/tuprints-00019887
Corresponding Links:
Origin: Secondary publication service
Abstract:

The growth of the layered chalcogenide GaSe on cleaved GaAs(110) surfaces was investigated with photoemission and low-energy electron diffraction (LEED). GaSe films grow with their c axis perpendicular to the GaAs(110) surface. LEED patterns after initial film growth are a superposition of rectangular GaAs:Se spots and two hexagonal domains rotated by ±5° with respect to the GaAs ⟨001⟩ axis. At higher film thickness a hexagonal LEED pattern with GaSe〈120〉 ‖ GaAs 〈001〉 is obtained.

Status: Publisher's Version
URN: urn:nbn:de:tuda-tuprints-198872
Classification DDC: 500 Science and mathematics > 530 Physics
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 12 Nov 2021 13:45
Last Modified: 23 Jan 2023 07:16
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19887
PPN: 503963895
Export:
Actions (login required)
View Item View Item