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Band lineup between CdS and ultra high vacuum-cleaved CuInS₂ single crystals

Klein, Andreas ; Löher, T. ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, Wolfram (2021)
Band lineup between CdS and ultra high vacuum-cleaved CuInS₂ single crystals.
In: Applied Physics Letters, 70 (10)
doi: 10.26083/tuprints-00019832
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Item Type: Article
Type of entry: Secondary publication
Title: Band lineup between CdS and ultra high vacuum-cleaved CuInS₂ single crystals
Language: English
Date: 2021
Place of Publication: Darmstadt
Publisher: AIP Publishing
Journal or Publication Title: Applied Physics Letters
Volume of the journal: 70
Issue Number: 10
DOI: 10.26083/tuprints-00019832
Corresponding Links:
Origin: Secondary publication service
Abstract:

The interface formation between vacuum evaporated CdS and ultrahigh vacuum-cleaved CuInS₂ single crystals has been studied by synchrotron excited photoelectron spectroscopy. The valence band discontinuity is determined directly from valence band difference spectra to be DEV 50.6 (60.1) eV. This value is significantly smaller than for other preparation conditions given in the literature and evidently not suitable for solar cell applications. The similarity to observations at the CdS/CuInSe₂ interfaces suggests that neutrality levels play a dominant role in establishing the band lineup at interfaces containing chalcopyrite semiconductors.

Status: Publisher's Version
URN: urn:nbn:de:tuda-tuprints-198325
Classification DDC: 500 Science and mathematics > 530 Physics
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 08 Nov 2021 12:07
Last Modified: 17 Jan 2023 09:13
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19832
PPN: 503666645
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