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Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device

Deuermeier, Jonas ; Kiazadeh, Asal ; Klein, Andreas ; Martins, Rodrigo ; Fortunato, Elvira (2021)
Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device.
In: Nanomaterials, 2019, 9 (2)
doi: 10.26083/tuprints-00019794
Article, Secondary publication, Publisher's Version

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Item Type: Article
Type of entry: Secondary publication
Title: Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device
Language: English
Date: 2021
Place of Publication: Darmstadt
Year of primary publication: 2019
Publisher: MDPI
Journal or Publication Title: Nanomaterials
Volume of the journal: 9
Issue Number: 2
Collation: 10 Seiten
DOI: 10.26083/tuprints-00019794
Corresponding Links:
Origin: Secondary publication service
Abstract:

Multi-level resistive switching characteristics of a Cu₂O/Al₂O₃ bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide - an unusual property for an oxide semiconductor - are discussed for the first time regarding their role in the resistive switching mechanism.

Status: Publisher's Version
URN: urn:nbn:de:tuda-tuprints-197941
Additional Information:

Keywords: resistive switching memories; multi-level cell; copper oxide; grain boundaries; aluminum oxide

Classification DDC: 600 Technology, medicine, applied sciences > 620 Engineering and machine engineering
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Electronic Structure of Materials (ESM)
Date Deposited: 29 Oct 2021 12:21
Last Modified: 14 Aug 2023 09:48
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19794
PPN: 495589306
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