Wendel, Philipp ; Dietz, Dominik ; Deuermeier, Jonas ; Klein, Andreas (2021)
Reversible Barrier Switching of ZnO/RuO₂ Schottky Diodes.
In: Materials, 2021, 14 (10)
doi: 10.26083/tuprints-00019377
Article, Secondary publication, Publisher's Version
|
Text
materials-14-02678 (1).pdf Copyright Information: CC BY 4.0 International - Creative Commons, Attribution. Download (383kB) | Preview |
| Item Type: | Article |
|---|---|
| Type of entry: | Secondary publication |
| Title: | Reversible Barrier Switching of ZnO/RuO₂ Schottky Diodes |
| Language: | English |
| Date: | 26 August 2021 |
| Place of Publication: | Darmstadt |
| Year of primary publication: | 2021 |
| Publisher: | MDPI |
| Journal or Publication Title: | Materials |
| Volume of the journal: | 14 |
| Issue Number: | 10 |
| Collation: | 7 Seiten |
| DOI: | 10.26083/tuprints-00019377 |
| Corresponding Links: | |
| Origin: | Secondary publication via sponsored Golden Open Access |
| Abstract: | The current-voltage characteristics of ZnO/RuO₂ Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies. |
| Status: | Publisher's Version |
| URN: | urn:nbn:de:tuda-tuprints-193772 |
| Additional Information: | Keywords: Schottky barrier; resistive switching; zinc oxide; ruthenium oxide; oxygen vacancies |
| Classification DDC: | 600 Technology, medicine, applied sciences > 620 Engineering and machine engineering |
| Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Electronic Structure of Materials (ESM) |
| Date Deposited: | 26 Aug 2021 12:14 |
| Last Modified: | 05 Dec 2024 12:42 |
| URI: | https://tuprints.ulb.tu-darmstadt.de/id/eprint/19377 |
| PPN: | 484803107 |
| Export: |
 |
View Item |
Drucken
Impressum