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Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route

Koslowski, Nico ; Hoffmann, Rudolf C. ; Trouillet, Vanessa ; Bruns, Michael ; Foro, Sabine ; Schneider, Jörg J. (2022)
Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route.
In: RSC Advances, 2019, 9 (54)
doi: 10.26083/tuprints-00013229
Article, Secondary publication, Publisher's Version

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Item Type: Article
Type of entry: Secondary publication
Title: Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route
Language: English
Date: 2022
Place of Publication: Darmstadt
Year of primary publication: 2019
Publisher: Royal Society of Chemistry
Journal or Publication Title: RSC Advances
Volume of the journal: 9
Issue Number: 54
DOI: 10.26083/tuprints-00013229
Corresponding Links:
Origin: Secondary publication
Abstract:

Combustion synthesis of dielectric yttrium oxide and aluminium oxide thin films is possible by introducing a molecular single-source precursor approach employing a newly designed nitro functionalized malonato complex of yttrium (Y-DEM-NO₂1) as well as defined urea nitrate coordination compounds of yttrium (Y-UN 2) and aluminium (Al-UN 3). All new precursor compounds were extensively characterized by spectroscopic techniques (NMR/IR) as well as by single-crystal structure analysis for both urea nitrate coordination compounds. The thermal decomposition of the precursors 1–3 was studied by means of differential scanning calorimetry (DSC) and thermogravimetry coupled with mass spectrometry and infrared spectroscopy (TG-MS/IR). As a result, a controlled thermal conversion of the precursors into dielectric thin films could be achieved. These oxidic thin films integrated within capacitor devices are exhibiting excellent dielectric behaviour in the temperature range between 250 and 350 °C, with areal capacity values up to 250 nF cm⁻², leakage current densities below 1.0 × 10⁻⁹ A cm⁻² (at 1 MV cm⁻¹) and breakdown voltages above 2 MV cm⁻¹. Thereby the increase in performance at higher temperatures can be attributed to the gradual conversion of the intermediate hydroxy species into the respective metal oxide which is confirmed by X-ray photoelectron spectroscopy (XPS). Finally, a solution-processed YxOy based TFT was fabricated employing the precursor Y-DEM-NO21. The device exhibits decent TFT characteristics with a saturation mobility (μsat) of 2.1 cm² V⁻¹ s⁻¹, a threshold voltage (Vth) of 6.9 V and an on/off current ratio (Ion/off) of 7.6 × 10⁵.

Status: Publisher's Version
URN: urn:nbn:de:tuda-tuprints-132296
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https://t1p.de/h3p8t

Classification DDC: 500 Science and mathematics > 540 Chemistry
Divisions: 07 Department of Chemistry > Eduard Zintl-Institut > Fachgebiet Anorganische Chemie
Date Deposited: 28 Mar 2022 12:19
Last Modified: 02 Mar 2023 07:32
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/13229
PPN: 50538468X
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