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Changes in Electronic Structure and Chemical Bonding upon Crystallization of the Phase Change Material GeSb₂Te₄

Klein, Andreas ; Dieker, H. ; Späth, B. ; Fons, P. ; Kolobov, A. ; Steimer, C. ; Wuttig, M. (2022):
Changes in Electronic Structure and Chemical Bonding upon Crystallization of the Phase Change Material GeSb₂Te₄. (Publisher's Version)
In: Physical Review Letters, 100 (1), American Physical Society, ISSN 0031-9007, e-ISSN 1079-7114,
DOI: 10.26083/tuprints-00021181,
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Item Type: Article
Origin: Secondary publication service
Status: Publisher's Version
Title: Changes in Electronic Structure and Chemical Bonding upon Crystallization of the Phase Change Material GeSb₂Te₄
Language: English
Abstract:

High-resolution photoelectron spectroscopy of in situ prepared films of GeSb₂Te₄ reveals significant differences in electronic and chemical structure between the amorphous and the crystalline phase. Evidence for two different chemical environments of Ge and Sb in the amorphous structure is found. This observation can explain the pronounced property contrast between both phases and provides new insight into the formation of the amorphous state.

Journal or Publication Title: Physical Review Letters
Volume of the journal: 100
Issue Number: 1
Publisher: American Physical Society
Collation: 4 Seiten
Classification DDC: 500 Naturwissenschaften und Mathematik > 530 Physik
600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 22 Apr 2022 11:08
Last Modified: 22 Apr 2022 11:08
DOI: 10.26083/tuprints-00021181
Corresponding Links:
URN: urn:nbn:de:tuda-tuprints-211814
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/21181
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