Rudolph, R. ; Tomm, Y. ; Pettenkofer, C. ; Klein, Andreas ; Jaegermann, Wolfram (2021):
Van der Waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110). (Publisher's Version)
In: Applied Physics Letters, 76 (9), pp. 1101-1103. AIP Publishing, ISSN 0003-6951, e-ISSN 1077-3118,
DOI: 10.26083/tuprints-00019887,
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Item Type: | Article |
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Origin: | Secondary publication service |
Status: | Publisher's Version |
Title: | Van der Waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110) |
Language: | English |
Abstract: | The growth of the layered chalcogenide GaSe on cleaved GaAs(110) surfaces was investigated with photoemission and low-energy electron diffraction (LEED). GaSe films grow with their c axis perpendicular to the GaAs(110) surface. LEED patterns after initial film growth are a superposition of rectangular GaAs:Se spots and two hexagonal domains rotated by ±5° with respect to the GaAs ⟨001⟩ axis. At higher film thickness a hexagonal LEED pattern with GaSe〈120〉 ‖ GaAs 〈001〉 is obtained. |
Journal or Publication Title: | Applied Physics Letters |
Journal volume: | 76 |
Issue Number: | 9 |
Publisher: | AIP Publishing |
Classification DDC: | 500 Naturwissenschaften und Mathematik > 530 Physik |
Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Surface Science |
Date Deposited: | 12 Nov 2021 13:45 |
Last Modified: | 12 Nov 2021 13:45 |
DOI: | 10.26083/tuprints-00019887 |
Corresponding Links: | |
URN: | urn:nbn:de:tuda-tuprints-198872 |
URI: | https://tuprints.ulb.tu-darmstadt.de/id/eprint/19887 |
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