Rudolph, R. ; Tomm, Y. ; Pettenkofer, C. ; Klein, Andreas ; Jaegermann, Wolfram (2021):
Van der Waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110). (Publisher's Version)
In: Applied Physics Letters, 76 (9), pp. 1101-1103. AIP Publishing, ISSN 0003-6951, e-ISSN 1077-3118,
DOI: 10.26083/tuprints-00019887,
[Article]
|
Text
19-1.125951.pdf Available under: only the rights of use according to UrhG. Download (895kB) | Preview |
| Item Type: | Article |
|---|---|
| Origin: | Secondary publication service |
| Status: | Publisher's Version |
| Title: | Van der Waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110) |
| Language: | English |
| Abstract: | The growth of the layered chalcogenide GaSe on cleaved GaAs(110) surfaces was investigated with photoemission and low-energy electron diffraction (LEED). GaSe films grow with their c axis perpendicular to the GaAs(110) surface. LEED patterns after initial film growth are a superposition of rectangular GaAs:Se spots and two hexagonal domains rotated by ±5° with respect to the GaAs ⟨001⟩ axis. At higher film thickness a hexagonal LEED pattern with GaSe〈120〉 ‖ GaAs 〈001〉 is obtained. |
| Journal or Publication Title: | Applied Physics Letters |
| Journal volume: | 76 |
| Number: | 9 |
| Publisher: | AIP Publishing |
| Classification DDC: | 500 Naturwissenschaften und Mathematik > 530 Physik |
| Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Surface Science |
| Date Deposited: | 12 Nov 2021 13:45 |
| Last Modified: | 12 Nov 2021 13:45 |
| DOI: | 10.26083/tuprints-00019887 |
| Corresponding Links: | |
| URN: | urn:nbn:de:tuda-tuprints-198872 |
| URI: | https://tuprints.ulb.tu-darmstadt.de/id/eprint/19887 |
| Export: |
 |
View Item |
Drucken
Impressum