Klein, Andreas ; Löher, T. ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, Wolfram (2021):
Band lineup between CdS and ultra high vacuum-cleaved CuInS₂ single crystals. (Publisher's Version)
In: Applied Physics Letters, 70 (10), pp. 1299-1301. AIP Publishing, ISSN 0003-6951, e-ISSN 1077-3118,
DOI: 10.26083/tuprints-00019832,
[Article]
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| Item Type: | Article |
|---|---|
| Origin: | Secondary publication service |
| Status: | Publisher's Version |
| Title: | Band lineup between CdS and ultra high vacuum-cleaved CuInS₂ single crystals |
| Language: | English |
| Abstract: | The interface formation between vacuum evaporated CdS and ultrahigh vacuum-cleaved CuInS₂ single crystals has been studied by synchrotron excited photoelectron spectroscopy. The valence band discontinuity is determined directly from valence band difference spectra to be DEV 50.6 (60.1) eV. This value is significantly smaller than for other preparation conditions given in the literature and evidently not suitable for solar cell applications. The similarity to observations at the CdS/CuInSe₂ interfaces suggests that neutrality levels play a dominant role in establishing the band lineup at interfaces containing chalcopyrite semiconductors. |
| Journal or Publication Title: | Applied Physics Letters |
| Volume of the journal: | 70 |
| Issue Number: | 10 |
| Publisher: | AIP Publishing |
| Classification DDC: | 500 Naturwissenschaften und Mathematik > 530 Physik |
| Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Surface Science |
| Date Deposited: | 08 Nov 2021 12:07 |
| Last Modified: | 08 Nov 2021 12:07 |
| DOI: | 10.26083/tuprints-00019832 |
| Corresponding Links: | |
| URN: | urn:nbn:de:tuda-tuprints-198325 |
| URI: | https://tuprints.ulb.tu-darmstadt.de/id/eprint/19832 |
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