Klein, Andreas ; Löher, T. ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, Wolfram (2021)
Band lineup between CdS and ultra high vacuum-cleaved CuInS₂ single crystals.
In: Applied Physics Letters, 1997, 70 (10)
doi: 10.26083/tuprints-00019832
Article, Secondary publication, Publisher's Version
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| Item Type: | Article |
|---|---|
| Type of entry: | Secondary publication |
| Title: | Band lineup between CdS and ultra high vacuum-cleaved CuInS₂ single crystals |
| Language: | English |
| Date: | 2021 |
| Place of Publication: | Darmstadt |
| Year of primary publication: | 1997 |
| Publisher: | AIP Publishing |
| Journal or Publication Title: | Applied Physics Letters |
| Volume of the journal: | 70 |
| Issue Number: | 10 |
| DOI: | 10.26083/tuprints-00019832 |
| Corresponding Links: | |
| Origin: | Secondary publication service |
| Abstract: | The interface formation between vacuum evaporated CdS and ultrahigh vacuum-cleaved CuInS₂ single crystals has been studied by synchrotron excited photoelectron spectroscopy. The valence band discontinuity is determined directly from valence band difference spectra to be DEV 50.6 (60.1) eV. This value is significantly smaller than for other preparation conditions given in the literature and evidently not suitable for solar cell applications. The similarity to observations at the CdS/CuInSe₂ interfaces suggests that neutrality levels play a dominant role in establishing the band lineup at interfaces containing chalcopyrite semiconductors. |
| Status: | Publisher's Version |
| URN: | urn:nbn:de:tuda-tuprints-198325 |
| Classification DDC: | 500 Science and mathematics > 530 Physics |
| Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Surface Science |
| Date Deposited: | 08 Nov 2021 12:07 |
| Last Modified: | 17 Jan 2023 09:13 |
| URI: | https://tuprints.ulb.tu-darmstadt.de/id/eprint/19832 |
| PPN: | 503666645 |
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