Deuermeier, Jonas ; Kiazadeh, Asal ; Klein, Andreas ; Martins, Rodrigo ; Fortunato, Elvira (2021):
Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device. (Publisher's Version)
In: Nanomaterials, 9 (2), MDPI, e-ISSN 2079-4991,
DOI: 10.26083/tuprints-00019794,
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Item Type: | Article |
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Origin: | Secondary publication service |
Status: | Publisher's Version |
Title: | Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device |
Language: | English |
Abstract: | Multi-level resistive switching characteristics of a Cu₂O/Al₂O₃ bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide - an unusual property for an oxide semiconductor - are discussed for the first time regarding their role in the resistive switching mechanism. |
Journal or Publication Title: | Nanomaterials |
Volume of the journal: | 9 |
Issue Number: | 2 |
Publisher: | MDPI |
Collation: | 10 Seiten |
Classification DDC: | 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften und Maschinenbau |
Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Electronic Structure of Materials (ESM) |
Date Deposited: | 29 Oct 2021 12:21 |
Last Modified: | 29 Oct 2021 12:21 |
DOI: | 10.26083/tuprints-00019794 |
Corresponding Links: | |
URN: | urn:nbn:de:tuda-tuprints-197941 |
Additional Information: | Keywords: resistive switching memories; multi-level cell; copper oxide; grain boundaries; aluminum oxide |
URI: | https://tuprints.ulb.tu-darmstadt.de/id/eprint/19794 |
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