Deuermeier, Jonas ; Kiazadeh, Asal ; Klein, Andreas ; Martins, Rodrigo ; Fortunato, Elvira (2021):
Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device. (Publisher's Version)
In: Nanomaterials, 9 (2), MDPI, e-ISSN 2079-4991,
DOI: 10.26083/tuprints-00019794,
[Article]
|
Text
nanomaterials-09-00289.pdf Copyright Information: CC BY 4.0 International - Creative Commons, Attribution. Download (3MB) | Preview |
| Item Type: | Article |
|---|---|
| Origin: | Secondary publication service |
| Status: | Publisher's Version |
| Title: | Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device |
| Language: | English |
| Abstract: | Multi-level resistive switching characteristics of a Cu₂O/Al₂O₃ bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide - an unusual property for an oxide semiconductor - are discussed for the first time regarding their role in the resistive switching mechanism. |
| Journal or Publication Title: | Nanomaterials |
| Volume of the journal: | 9 |
| Issue Number: | 2 |
| Publisher: | MDPI |
| Collation: | 10 Seiten |
| Classification DDC: | 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften und Maschinenbau |
| Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Electronic Structure of Materials (ESM) |
| Date Deposited: | 29 Oct 2021 12:21 |
| Last Modified: | 29 Oct 2021 12:21 |
| DOI: | 10.26083/tuprints-00019794 |
| Corresponding Links: | |
| URN: | urn:nbn:de:tuda-tuprints-197941 |
| Additional Information: | Keywords: resistive switching memories; multi-level cell; copper oxide; grain boundaries; aluminum oxide |
| URI: | https://tuprints.ulb.tu-darmstadt.de/id/eprint/19794 |
| PPN: | |
| Export: |
 |
View Item |
Drucken
Impressum