Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device

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Item Type:	Article
Type of entry:	Secondary publication
Title:	Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device
Language:	English
Date:	2021
Place of Publication:	Darmstadt
Year of primary publication:	2019
Publisher:	MDPI
Journal or Publication Title:	Nanomaterials
Volume of the journal:	9
Issue Number:	2
Collation:	10 Seiten
DOI:	10.26083/tuprints-00019794
Corresponding Links:	Publisher-DOI
Origin:	Secondary publication service
Abstract:	Multi-level resistive switching characteristics of a Cu₂O/Al₂O₃ bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide - an unusual property for an oxide semiconductor - are discussed for the first time regarding their role in the resistive switching mechanism.
Status:	Publisher's Version
URN:	urn:nbn:de:tuda-tuprints-197941
Additional Information:	Keywords: resistive switching memories; multi-level cell; copper oxide; grain boundaries; aluminum oxide
Classification DDC:	600 Technology, medicine, applied sciences > 620 Engineering and machine engineering
Divisions:	11 Department of Materials and Earth Sciences > Material Science > Electronic Structure of Materials (ESM)
Date Deposited:	29 Oct 2021 12:21
Last Modified:	14 Aug 2023 09:48
URI:	https://tuprints.ulb.tu-darmstadt.de/id/eprint/19794
PPN:	495589306
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