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Vanishing Hysteresis in Carbon Nanotube Transistors Embedded in Boron Nitride/Polytetrafluoroethylene Heterolayers

Kumar, Sandeep ; Dagli, Daghan ; Dehm, Simone ; Das, Chittaranjan ; Wei, Li ; Chen, Yuan ; Hennrich, Frank ; Krupke, Ralph (2024)
Vanishing Hysteresis in Carbon Nanotube Transistors Embedded in Boron Nitride/Polytetrafluoroethylene Heterolayers.
In: Physica Status Solidi (RRL) – Rapid Research Letters, 2020, 14 (8)
doi: 10.26083/tuprints-00015634
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Item Type: Article
Type of entry: Secondary publication
Title: Vanishing Hysteresis in Carbon Nanotube Transistors Embedded in Boron Nitride/Polytetrafluoroethylene Heterolayers
Language: English
Date: 9 January 2024
Place of Publication: Darmstadt
Year of primary publication: 2020
Place of primary publication: Weinheim
Publisher: Wiley-VCH
Journal or Publication Title: Physica Status Solidi (RRL) – Rapid Research Letters
Volume of the journal: 14
Issue Number: 8
Collation: 7 Seiten
DOI: 10.26083/tuprints-00015634
Corresponding Links:
Origin: Secondary publication DeepGreen
Abstract:

Carbon nanotube field‐effect transistors fabricated on silicon wafers with thermal oxide often suffer from large gate‐voltage hysteresis, induced by charge trapping sites in oxides, surface hydroxyl groups, and the presence of water molecules. Surface functionalization and passivation, as well as vacuum annealing and reduced operating temperature, have shown to diminish or even eliminate hysteresis. Herein, the fabrication of nearly hysteresis‐free transistors on Si/SiO₂ by embedding carbon nanotubes and the connecting electrodes in a hexagonal boron nitride (h‐BN) bottom layer and a polytetrafluoroethylene (PTFE) top layer is demonstrated. The conditions at which catalyst‐free synthesis of h‐BN on SiO₂/Si with borazine is obtained, and the subsequent liquid‐phase deposition of PTFE, are discussed. Device transfer curves are measured before and after PTFE deposition. It is found that the hysteresis is reduced after PTFE deposition, but vanishes only after a waiting period of several days. Simultaneously, the on‐state current increases with time. The results give evidence for the absence of trap states in h‐BN/PTFE heterolayers and a high breakthrough field strength in those wafer‐scalable materials.

Uncontrolled Keywords: boron nitride, carbon nanotubes, hysteresis, polytetrafluoroethylene, transistors
Identification Number: 2000193
Status: Publisher's Version
URN: urn:nbn:de:tuda-tuprints-156345
Additional Information:

This article also appears in: Electronic Properties of Novel Materials

Classification DDC: 500 Science and mathematics > 530 Physics
600 Technology, medicine, applied sciences > 660 Chemical engineering
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Fachgebiet Molekulare Nanostrukturen
Date Deposited: 09 Jan 2024 12:46
Last Modified: 11 Jan 2024 14:04
SWORD Depositor: Deep Green
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/15634
PPN: 514577878
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