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Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route

Koslowski, Nico ; Hoffmann, Rudolf C. ; Trouillet, Vanessa ; Bruns, Michael ; Foro, Sabine ; Schneider, Jörg J. (2022):
Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route. (Publisher's Version)
In: RSC Advances, 9 (54), pp. 31386-31397. Royal Society of Chemistry, e-ISSN 2046-2069,
DOI: 10.26083/tuprints-00013229,
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Item Type: Article
Origin: Secondary publication
Status: Publisher's Version
Title: Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route
Language: English
Abstract:

Combustion synthesis of dielectric yttrium oxide and aluminium oxide thin films is possible by introducing a molecular single-source precursor approach employing a newly designed nitro functionalized malonato complex of yttrium (Y-DEM-NO₂1) as well as defined urea nitrate coordination compounds of yttrium (Y-UN 2) and aluminium (Al-UN 3). All new precursor compounds were extensively characterized by spectroscopic techniques (NMR/IR) as well as by single-crystal structure analysis for both urea nitrate coordination compounds. The thermal decomposition of the precursors 1–3 was studied by means of differential scanning calorimetry (DSC) and thermogravimetry coupled with mass spectrometry and infrared spectroscopy (TG-MS/IR). As a result, a controlled thermal conversion of the precursors into dielectric thin films could be achieved. These oxidic thin films integrated within capacitor devices are exhibiting excellent dielectric behaviour in the temperature range between 250 and 350 °C, with areal capacity values up to 250 nF cm⁻², leakage current densities below 1.0 × 10⁻⁹ A cm⁻² (at 1 MV cm⁻¹) and breakdown voltages above 2 MV cm⁻¹. Thereby the increase in performance at higher temperatures can be attributed to the gradual conversion of the intermediate hydroxy species into the respective metal oxide which is confirmed by X-ray photoelectron spectroscopy (XPS). Finally, a solution-processed YxOy based TFT was fabricated employing the precursor Y-DEM-NO21. The device exhibits decent TFT characteristics with a saturation mobility (μsat) of 2.1 cm² V⁻¹ s⁻¹, a threshold voltage (Vth) of 6.9 V and an on/off current ratio (Ion/off) of 7.6 × 10⁵.

Journal or Publication Title: RSC Advances
Volume of the journal: 9
Issue Number: 54
Publisher: Royal Society of Chemistry
Classification DDC: 500 Naturwissenschaften und Mathematik > 540 Chemie
Divisions: 07 Department of Chemistry > Fachgebiet Anorganische Chemie
Date Deposited: 28 Mar 2022 12:19
Last Modified: 28 Mar 2022 12:19
DOI: 10.26083/tuprints-00013229
Corresponding Links:
URN: urn:nbn:de:tuda-tuprints-132296
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Electronic supplementary information:

https://t1p.de/h3p8t

URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/13229
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