Methodology for Electrical Characterization of MOS Devices with Alternative Gate Dielectrics

Kerber, Andreas (2004)
Methodology for Electrical Characterization of MOS Devices with Alternative Gate Dielectrics.
Technische Universität Darmstadt
Ph.D. Thesis, Primary publication

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Item Type:

Ph.D. Thesis

Type of entry:

Primary publication

Title:

Methodology for Electrical Characterization of MOS Devices with Alternative Gate Dielectrics

Language:

English

Referees:

Schwalke, Prof. Dr. Udo ; Maes, Prof. Dr. Herman

Advisors:

Schwalke, Prof. Dr. Udo

Date:

6 February 2004

Place of Publication:

Darmstadt

Date of oral examination:

19 January 2004

Abstract:

Aggressive scaling of Complementary Metal Oxide Semiconductor (CMOS) devices is driving SiO2 based gate dielectrics to its physical limits. Currently several alternative dielectric materials are being studied extensively as replacement for SiO2. This work mainly discusses charge trapping and the dielectric reliability of SiO2 / Al2O3 and SiO2 / HfO2 dual layer gate dielectrics. Due to the presence of transient charging / discharging effects measurement techniques down to the µs time range are being introduced.

Alternative Abstract:

Alternative Abstract

Language

Aufgrund der raschen Miniaturisierung von komplementären Metall Oxyd Halbleiter (CMOS) Schaltkreisen werden die physikalischen Grenzen von Dielektrika auf SiO2 Basis in naher Zukunft erreicht. Verschiedene alternative dielektrische Materialien werden derzeit intensiv als Ersatz für SiO2 untersucht. In dieser Arbeit werden vorwiegend der Ladungseinfang und die Zuverlässigkeit von SiO2 / Al2O3 and SiO2 / HfO2 Schichten diskutiert. Aufgrund transienter Lade / Entladevorgänge werden schnelle Messverfahren im µs Bereich vorgestellt.

German

Uncontrolled Keywords:

Zuverlässigkeit, Ladungseinfang, Beweglichkeit, Defektgeneration, Alternative Dielektrika, Al2O3, HfO2

Alternative keywords:

Alternative keywords	Language
Zuverlässigkeit, Ladungseinfang, Beweglichkeit, Defektgeneration, Alternative Dielektrika, Al2O3, HfO2	German
reliability, charge trapping, mobility, defect generation, alternative dielectrics, Al2O3, HfO2	English

URN:

urn:nbn:de:tuda-tuprints-4044

Classification DDC:

600 Technology, medicine, applied sciences > 620 Engineering and machine engineering

Divisions:

18 Department of Electrical Engineering and Information Technology

Date Deposited:

17 Oct 2008 09:21

Last Modified:

08 Jul 2020 22:48

URI:

https://tuprints.ulb.tu-darmstadt.de/id/eprint/404