2008
Zweitveröffentlichung
Artikel
Verlagsversion
Changes in Electronic Structure and Chemical Bonding upon Crystallization of the Phase Change Material GeSb₂Te₄
Changes in Electronic Structure and Chemical Bonding upon Crystallization of the Phase Change Material GeSb₂Te₄
File(s)
Hauptpublikation
PhysRevLett.100.016402.pdf
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Kurzbeschreibung (Abstract)
High-resolution photoelectron spectroscopy of in situ prepared films of GeSb₂Te₄ reveals significant differences in electronic and chemical structure between the amorphous and the crystalline phase. Evidence for two different chemical environments of Ge and Sb in the amorphous structure is found. This observation can explain the pronounced property contrast between both phases and provides new insight into the formation of the amorphous state.
Sprache
Englisch
Institution
Universitäts- und Landesbibliothek Darmstadt
Ort
Darmstadt
Titel der Zeitschrift / Schriftenreihe
Physical Review Letters
Jahrgang der Zeitschrift
100
Heftnummer der Zeitschrift
1
ISSN
1079-7114
Verlag
American Physical Society
Publikationsjahr der Erstveröffentlichung
2008
Verlags-DOI
PPN
