Lang, O. ; Pettenkofer, C. ; Sánchez-Royo, Juan Francisco ; Segura, Alfredo ; Klein, Andreas ; Jaegermann, Wolfram (2021)
Thin film growth and band lineup of In₂O₃ on the layered semiconductor InSe.
In: Journal of Applied Physics, 1999, 86 (10)
doi: 10.26083/tuprints-00019939
Article, Secondary publication, Publisher's Version
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| Item Type: | Article |
|---|---|
| Type of entry: | Secondary publication |
| Title: | Thin film growth and band lineup of In₂O₃ on the layered semiconductor InSe |
| Language: | English |
| Date: | 2021 |
| Place of Publication: | Darmstadt |
| Year of primary publication: | 1999 |
| Publisher: | AIP Publishing |
| Journal or Publication Title: | Journal of Applied Physics |
| Volume of the journal: | 86 |
| Issue Number: | 10 |
| DOI: | 10.26083/tuprints-00019939 |
| Corresponding Links: | |
| Origin: | Secondary publication service |
| Abstract: | Thin films of the transparent conducting oxide In₂O₃ have been prepared in ultrahigh vacuum by reactive evaporation of indium. X-ray diffraction, optical, and electrical measurements were used to characterize properties of films deposited on transparent insulating mica substrates under variation of the oxygen pressure. Photoelectron spectroscopy was used to investigate in situ the interface formation between In₂O₃ and the layered semiconductor InSe. |
| Status: | Publisher's Version |
| URN: | urn:nbn:de:tuda-tuprints-199393 |
| Classification DDC: | 500 Science and mathematics > 530 Physics |
| Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Surface Science |
| Date Deposited: | 17 Nov 2021 13:27 |
| Last Modified: | 02 Feb 2023 09:09 |
| URI: | https://tuprints.ulb.tu-darmstadt.de/id/eprint/19939 |
| PPN: | 504218980 |
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