Rudolph, R. ; Tomm, Y. ; Pettenkofer, C. ; Klein, Andreas ; Jaegermann, Wolfram (2021)
Van der Waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110).
In: Applied Physics Letters, 2000, 76 (9)
doi: 10.26083/tuprints-00019887
Article, Secondary publication, Publisher's Version
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| Item Type: | Article |
|---|---|
| Type of entry: | Secondary publication |
| Title: | Van der Waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110) |
| Language: | English |
| Date: | 2021 |
| Place of Publication: | Darmstadt |
| Year of primary publication: | 2000 |
| Publisher: | AIP Publishing |
| Journal or Publication Title: | Applied Physics Letters |
| Volume of the journal: | 76 |
| Issue Number: | 9 |
| DOI: | 10.26083/tuprints-00019887 |
| Corresponding Links: | |
| Origin: | Secondary publication service |
| Abstract: | The growth of the layered chalcogenide GaSe on cleaved GaAs(110) surfaces was investigated with photoemission and low-energy electron diffraction (LEED). GaSe films grow with their c axis perpendicular to the GaAs(110) surface. LEED patterns after initial film growth are a superposition of rectangular GaAs:Se spots and two hexagonal domains rotated by ±5° with respect to the GaAs ⟨001⟩ axis. At higher film thickness a hexagonal LEED pattern with GaSe〈120〉 ‖ GaAs 〈001〉 is obtained. |
| Status: | Publisher's Version |
| URN: | urn:nbn:de:tuda-tuprints-198872 |
| Classification DDC: | 500 Science and mathematics > 530 Physics |
| Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Surface Science |
| Date Deposited: | 12 Nov 2021 13:45 |
| Last Modified: | 23 Jan 2023 07:16 |
| URI: | https://tuprints.ulb.tu-darmstadt.de/id/eprint/19887 |
| PPN: | 503963895 |
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