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Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device

Deuermeier, Jonas ; Kiazadeh, Asal ; Klein, Andreas ; Martins, Rodrigo ; Fortunato, Elvira (2021):
Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device. (Publisher's Version)
In: Nanomaterials, 9 (2), MDPI, e-ISSN 2079-4991,
DOI: 10.26083/tuprints-00019794,
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Item Type: Article
Origin: Secondary publication service
Status: Publisher's Version
Title: Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device
Language: English
Abstract:

Multi-level resistive switching characteristics of a Cu₂O/Al₂O₃ bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide - an unusual property for an oxide semiconductor - are discussed for the first time regarding their role in the resistive switching mechanism.

Journal or Publication Title: Nanomaterials
Journal volume: 9
Number: 2
Publisher: MDPI
Collation: 10 Seiten
Classification DDC: 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Electronic Structure of Materials (ESM)
Date Deposited: 29 Oct 2021 12:21
Last Modified: 29 Oct 2021 12:21
DOI: 10.26083/tuprints-00019794
Corresponding Links:
URN: urn:nbn:de:tuda-tuprints-197941
Additional Information:

Keywords: resistive switching memories; multi-level cell; copper oxide; grain boundaries; aluminum oxide

URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19794
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