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Intermediate Frequency Circuit Components for Integration of on-Chip Amplifier With THz Detectors

Yadav, Rahul ; Preu, Sascha ; Penirschke, Andreas (2024)
Intermediate Frequency Circuit Components for Integration of on-Chip Amplifier With THz Detectors.
12th International Beam Instrumentation Conference (IBIC2023). Saskatoon, Canada (10.-14.09.2023)
doi: 10.26083/tuprints-00024630
Conference or Workshop Item, Secondary publication, Publisher's Version

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Item Type: Conference or Workshop Item
Type of entry: Secondary publication
Title: Intermediate Frequency Circuit Components for Integration of on-Chip Amplifier With THz Detectors
Language: English
Date: 8 January 2024
Place of Publication: Darmstadt
Year of primary publication: 30 September 2023
Place of primary publication: Geneva, Switzerland
Publisher: JACoW Publishing
Book Title: Proceedings of the 12th International Beam Instrumentation Conference
Series: International Beam Instrumentation Conference
Series Volume: 12
Collation: 5 Seiten
Event Title: 12th International Beam Instrumentation Conference (IBIC2023)
Event Location: Saskatoon, Canada
Event Dates: 10.-14.09.2023
DOI: 10.26083/tuprints-00024630
Corresponding Links:
Origin: Secondary publication service

The demand for THz detectors for beam diagnosis and alignment at THz generating accelerator facilities increases continuously especially for room temperature applications. The Zero-Bias Schottky Diode (ZBSD) and field effect transistor (TeraFET) based Terahertz (THz) detectors are well suited for both, signal power detection at DC as well as Pulse shape diagnostics by down-conversion at intermediate frequencies (IF). The limited signal strength due to the roll-off factor of the low pass filter characteristic of the detectors at higher THz frequencies requires wide-band amplifiers to enhance the IF signal from a few µW to nW well above the noise floor of the subsequent post detection electronics. Using external amplifiers would enhance the signal losses even further due to additional connectors and rf-cable losses and degrade the signal to noise ratio (SNR). In order to maximize the SNR, we propose to have an on-chip amplifier integrated in the detectors intermediate frequency (IF) circuit in the same housing. In this work, we present the design and parametric analysis of components for transition to an IF circuit, which will be integrated in the ZBSD and TeraFET on chip with amplifier. A rigorous design analysis has been done to find the optimal parameters for wide-band operation in order to enhance the detector’s resolution to capture pulses in the pico-second range with the help of fast post detection electronics.

Uncontrolled Keywords: detector, electron, electronics, GUI, operation
Identification Number: TUP010
Status: Publisher's Version
URN: urn:nbn:de:tuda-tuprints-246304
Classification DDC: 600 Technology, medicine, applied sciences > 621.3 Electrical engineering, electronics
Divisions: 18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics (IMP) > Terahertz Devices and Systems
Date Deposited: 08 Jan 2024 10:37
Last Modified: 09 Jan 2024 09:16
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/24630
PPN: 514519657
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