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Novel Diode Structures Based on Polar and Non-polar III-Nitride Semiconductors

Sanjari, Mohammad Shahab (2023)
Novel Diode Structures Based on Polar and Non-polar III-Nitride Semiconductors.
Technische Universität Darmstadt
doi: 10.26083/tuprints-00023080
Master Thesis, Primary publication, Publisher's Version

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Item Type: Master Thesis
Type of entry: Primary publication
Title: Novel Diode Structures Based on Polar and Non-polar III-Nitride Semiconductors
Language: English
Date: 2023
Place of Publication: Darmstadt
Collation: 87 Seiten
Date of oral examination: 2 February 2009
DOI: 10.26083/tuprints-00023080

This work deals with the realization of resonant tunneling diodes based on polar and non-polar gallium nitride for use in very high frequency applications. First, the material properties of gallium nitride and aluminium nitride are discussed. After a brief review of existing theories for the calculation of heterostructures, results of simulations on some proposed structures are presented. The growth and fabrication of several single and dual quantum barrier diode structures using MOCVD and clean room contact lithography are then described. The fabricated diodes were electrically measured and characterised. The results obtained are finally compared with the literature.

Uncontrolled Keywords: diode, high frequency, tunneling, electronics, heterostructures, GaN, AlN, AlGaN, MOCVD, microwave, terahertz, semiconductor, quantum
Status: Publisher's Version
URN: urn:nbn:de:tuda-tuprints-230804
Classification DDC: 500 Science and mathematics > 530 Physics
600 Technology, medicine, applied sciences > 600 Technology
600 Technology, medicine, applied sciences > 620 Engineering and machine engineering
Divisions: 18 Department of Electrical Engineering and Information Technology > Höchstfrequenzelektronik
Date Deposited: 23 Mar 2023 10:35
Last Modified: 24 Mar 2023 06:49
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/23080
PPN: 506250768
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