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Electronically Decoupled Films of InSe Prepared by van der Waals Epitaxy: Localized and Delocalized Valence States

Klein, Andreas ; Lang, O. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, Wolfram (2022):
Electronically Decoupled Films of InSe Prepared by van der Waals Epitaxy: Localized and Delocalized Valence States. (Publisher's Version)
In: Physical Review Letters, 80 (2), pp. 361-364. American Physical Society, ISSN 0031-9007, e-ISSN 1079-7114,
DOI: 10.26083/tuprints-00021182,
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Item Type: Article
Origin: Secondary publication service
Status: Publisher's Version
Title: Electronically Decoupled Films of InSe Prepared by van der Waals Epitaxy: Localized and Delocalized Valence States
Language: English
Abstract:

Submonolayer to several monolayer thick films of the layered semiconductor InSe were deposited on highly oriented pyrolytic graphite by van der Waals epitaxy and probed by energy dependent angle resolved photoelectron spectroscopy. The layers show a transition from two-dimensional bands with atomiclike states to molecularlike states localized along the c direction normal to the surface. The extended band structure showing band dispersion was observed for thicker films.

Journal or Publication Title: Physical Review Letters
Volume of the journal: 80
Issue Number: 2
Publisher: American Physical Society
Classification DDC: 500 Naturwissenschaften und Mathematik > 530 Physik
600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 22 Apr 2022 11:09
Last Modified: 22 Apr 2022 11:09
DOI: 10.26083/tuprints-00021182
Corresponding Links:
URN: urn:nbn:de:tuda-tuprints-211821
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/21182
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