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Electronic structure of In₂O₃ and Sn-doped In₂O₃ by hard x-ray photoemission spectroscopy

Körber, C. ; Krishnakumar, V. ; Klein, Andreas ; Panaccione, G. ; Torelli, P. ; Walsh, A. ; Silva, J. L. F. Da ; Wei, S.-H. ; Egdell, R. G. ; Payne, D. J. (2022):
Electronic structure of In₂O₃ and Sn-doped In₂O₃ by hard x-ray photoemission spectroscopy. (Publisher's Version)
In: Physical Review B, 81 (16), American Physical Society, ISSN 2469-9950, e-ISSN 2469-9969,
DOI: 10.26083/tuprints-00021168,

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Item Type: Article
Origin: Secondary publication service
Status: Publisher's Version
Title: Electronic structure of In₂O₃ and Sn-doped In₂O₃ by hard x-ray photoemission spectroscopy
Language: English

The valence and core levels of In₂O₃ and Sn-doped In₂O₃ have been studied by hard x-ray photoemission spectroscopy (hν=6000 eV) and by conventional Al Kα (hν=1486.6 eV) x-ray photoemission spectroscopy. The experimental spectra are compared with density-functional theory calculations. It is shown that structure deriving from electronic levels with significant In or Sn 5s character is selectively enhanced under 6000 eV excitation. This allows us to infer that conduction band states in Sn-doped samples and states at the bottom of the valence band both contain a pronounced In 5s contribution. The In 3d core line measured at hν=1486.6 eV for both undoped and Sn-doped In₂O₃ display an asymmetric lineshape, and may be fitted with two components associated with screened and unscreened final states. The In 3d core line spectra excited at hν=6000 eV for the Sn-doped samples display pronounced shoulders and demand a fit with two components. The In 3d core line spectrum for the undoped sample can also be fitted with two components, although the relative intensity of the component associated with the screened final state is low, compared to excitation at 1486.6 eV. These results are consistent with a high concentration of carriers confined close to the surface of nominally undoped In₂O₃. This conclusion is in accord with the fact that a conduction band feature observed for undoped In₂O₃ in Al Kα x-ray photoemission is much weaker than expected in hard x-ray photoemission.

Journal or Publication Title: Physical Review B
Volume of the journal: 81
Issue Number: 16
Publisher: American Physical Society
Collation: 9 Seiten
Classification DDC: 500 Naturwissenschaften und Mathematik > 530 Physik
600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
DFG-Collaborative Research Centres (incl. Transregio) > Collaborative Research Centres > CRC 595: Electrical fatigue > D - Component properties > Subproject D3: Function and fatigue of oxide electrodes in organic light emitting diodes
Date Deposited: 20 Apr 2022 12:10
Last Modified: 20 Apr 2022 12:11
DOI: 10.26083/tuprints-00021168
Corresponding Links:
URN: urn:nbn:de:tuda-tuprints-211688
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/21168
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