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Growth of Boron-Rich Nanowires by Chemical Vapor Deposition (CVD)

Guo, L. ; Singh, R. N. ; Kleebe, Hans‐Joachim (2022)
Growth of Boron-Rich Nanowires by Chemical Vapor Deposition (CVD).
In: Journal of Nanomaterials, 2006, 2006
doi: 10.26083/tuprints-00020480
Article, Secondary publication, Publisher's Version

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Item Type: Article
Type of entry: Secondary publication
Title: Growth of Boron-Rich Nanowires by Chemical Vapor Deposition (CVD)
Language: English
Date: 2022
Place of Publication: Darmstadt
Year of primary publication: 2006
Publisher: Hindawi Publishing Corporation
Journal or Publication Title: Journal of Nanomaterials
Volume of the journal: 2006
Collation: 6 Seiten
DOI: 10.26083/tuprints-00020480
Corresponding Links:
Origin: Secondary publication service

B-rich nanowires are grown on Ni coated oxidized Si(111) substrate using diborane as the gas precursor in a CVD process at 20 torr and 900°C. These nanowires have diameters around 20–100 nanometers and lengths up to microns. Icosahedron B12 is shown to be the basic building unit forming the amorphous B-rich nanowires as characterized by EDAX, XRD, XPS, and Raman spectroscopies. The gas chemistry at low [B₂H₆]/ [N₂] ratio is monitored by the in situ mass spectroscopy, which identified N₂ as an inert carrier gas leading to formation of the B-rich compounds. A nucleation controlled growth mechanism is proposed to explain the rugged nanowire growth of boron. The role of the Ni catalyst in the synthesis of the B-rich nanostructures is also discussed.

Status: Publisher's Version
URN: urn:nbn:de:tuda-tuprints-204800
Classification DDC: 500 Science and mathematics > 540 Chemistry
500 Science and mathematics > 550 Earth sciences and geology
Divisions: 11 Department of Materials and Earth Sciences > Earth Science > Geo-Material-Science
Date Deposited: 09 Feb 2022 13:28
Last Modified: 24 Mar 2023 07:12
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/20480
PPN: 506251853
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