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Growth of Boron-Rich Nanowires by Chemical Vapor Deposition (CVD)

Guo, L. ; Singh, R. N. ; Kleebe, Hans‐Joachim (2022):
Growth of Boron-Rich Nanowires by Chemical Vapor Deposition (CVD). (Publisher's Version)
In: Journal of Nanomaterials, 2006, Hindawi Publishing Corporation, ISSN 1687-4110, e-ISSN 1687-4129,
DOI: 10.26083/tuprints-00020480,
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Item Type: Article
Origin: Secondary publication service
Status: Publisher's Version
Title: Growth of Boron-Rich Nanowires by Chemical Vapor Deposition (CVD)
Language: English
Abstract:

B-rich nanowires are grown on Ni coated oxidized Si(111) substrate using diborane as the gas precursor in a CVD process at 20 torr and 900°C. These nanowires have diameters around 20–100 nanometers and lengths up to microns. Icosahedron B12 is shown to be the basic building unit forming the amorphous B-rich nanowires as characterized by EDAX, XRD, XPS, and Raman spectroscopies. The gas chemistry at low [B₂H₆]/ [N₂] ratio is monitored by the in situ mass spectroscopy, which identified N₂ as an inert carrier gas leading to formation of the B-rich compounds. A nucleation controlled growth mechanism is proposed to explain the rugged nanowire growth of boron. The role of the Ni catalyst in the synthesis of the B-rich nanostructures is also discussed.

Journal or Publication Title: Journal of Nanomaterials
Volume of the journal: 2006
Publisher: Hindawi Publishing Corporation
Collation: 6 Seiten
Classification DDC: 500 Naturwissenschaften und Mathematik > 540 Chemie
500 Naturwissenschaften und Mathematik > 550 Geowissenschaften
Divisions: 11 Department of Materials and Earth Sciences > Earth Science > Geo-Material-Science
Date Deposited: 09 Feb 2022 13:28
Last Modified: 09 Feb 2022 13:29
DOI: 10.26083/tuprints-00020480
Corresponding Links:
URN: urn:nbn:de:tuda-tuprints-204800
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/20480
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