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Earth-abundant and environmentally-friendly Cu₂–II–IV–VI₄ (II = Sr, Ba; IV = Ge, Sn; VI = S,Se) are considered materials for the absorber layers in thin film solar cells. Attempts to understand and improve optoelectronic properties of these newly emerged absorbers resulted in an efficiency of 5.2% in less than two years. However, the energy band alignment at the buffer/absorber interface has not been studied yet; an information which is of crucial importance for designing high performance devices. Therefore, current study focuses on the band offsets between these materials and the CdS buffer. Using first-principles calculations, band discontinuities are calculated at the buffer/absorber interface. The results yield a type-II band alignment between all Cu₂–II–IV–VI₄ absorbers and CdS, hence a negative ΔEc. Adoption of a negative ΔEc (cliff-like conduction band offset) at the buffer/absorber interface, however, gives rise to low open circuit voltage and high interface-related recombinations. Therefore, it is necessary to search for an alternative buffer material that forms a type-I band alignment with these absorbers, where the conduction band minimum and the valence band maximum are both localized on the absorber side.