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Partial density of states in the CuInSe₂ valence bands

Löher, T. ; Klein, Andreas ; Pettenkofer, C. ; Jaegermann, Wolfram (2021):
Partial density of states in the CuInSe₂ valence bands. (Publisher's Version)
In: Journal of Applied Physics, 81 (12), pp. 7806-7809. AIP Publishing, ISSN 0021-8979, e-ISSN 1089-7550,
DOI: 10.26083/tuprints-00019929,

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Item Type: Article
Origin: Secondary publication service
Status: Publisher's Version
Title: Partial density of states in the CuInSe₂ valence bands
Language: English

The valence band spectra of a vacuum cleaved CuInSe₂ (011) surface were measured with synchrotron radiation at photon energies between 16 and 95 eV. The strong dependence of the photoionization cross section of atomic levels between 28 and 60 eV is used to divide the valence band emissions into contributions from Se 4p and Cu 3d states in order to map the respective partial density of states. The derived partial density of Cu 3d states to the total valence band density of states is around 50% in the upper part of the valence band and about 75% at its maximum corresponding to non-bonding Cu d states.

Journal or Publication Title: Journal of Applied Physics
Volume of the journal: 81
Issue Number: 12
Publisher: AIP Publishing
Classification DDC: 500 Naturwissenschaften und Mathematik > 530 Physik
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 17 Nov 2021 13:19
Last Modified: 17 Nov 2021 13:19
DOI: 10.26083/tuprints-00019929
Corresponding Links:
URN: urn:nbn:de:tuda-tuprints-199297
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19929
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