Lang, O. ; Klein, Andreas ; Pettenkofer, Christian ; Jaegermann, Wolfram ; Chevy, Alain (2021):
Band lineup of lattice mismatched InSe/GaSe quantum well structures prepared by van der Waals epitaxy: Absence of interfacial dipoles. (Publisher's Version)
In: Journal of Applied Physics, 80 (7), pp. 3817-3821. AIP Publishing, ISSN 0021-8979, e-ISSN 1077-3118,
DOI: 10.26083/tuprints-00019891,
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| Item Type: | Article |
|---|---|
| Origin: | Secondary publication service |
| Status: | Publisher's Version |
| Title: | Band lineup of lattice mismatched InSe/GaSe quantum well structures prepared by van der Waals epitaxy: Absence of interfacial dipoles |
| Language: | English |
| Abstract: | Epitaxial growth of the strongly lattice mismatched (6.5%) layered chalcogenides InSe and GaSe on each other is obtained with the concept of van der Waals epitaxy as proven by low‐energy electron diffraction and scanning tunnel microscope. InSe/GaSe/InSe and GaSe/InSe/GaSe quantum well structures were prepared by molecular beam epitaxy and their interface properties were characterized by soft x‐ray photoelectron spectroscopy. Valence and conduction band offsets are determined to be 0.1 and 0.9 eV, respectively, and do not depend on deposition sequence (commutativity). As determined from the measured work functions the interface dipole is 0.05 eV; the band lineup between the two materials is correctly predicted by the Anderson model (electron affinity rule). |
| Journal or Publication Title: | Journal of Applied Physics |
| Volume of the journal: | 80 |
| Issue Number: | 7 |
| Publisher: | AIP Publishing |
| Classification DDC: | 500 Naturwissenschaften und Mathematik > 530 Physik |
| Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Surface Science |
| Date Deposited: | 12 Nov 2021 13:50 |
| Last Modified: | 12 Nov 2021 13:50 |
| DOI: | 10.26083/tuprints-00019891 |
| Corresponding Links: | |
| URN: | urn:nbn:de:tuda-tuprints-198914 |
| URI: | https://tuprints.ulb.tu-darmstadt.de/id/eprint/19891 |
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