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Nitrogen doping of ZnTe and its influence on CdTe∕ZnTe interfaces

Späth, B. ; Fritsche, J. ; Klein, Andreas ; Jaegermann, Wolfram (2021)
Nitrogen doping of ZnTe and its influence on CdTe∕ZnTe interfaces.
In: Applied Physics Letters, 90 (6)
doi: 10.26083/tuprints-00019883
Article, Secondary publication, Publisher's Version

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Item Type: Article
Type of entry: Secondary publication
Title: Nitrogen doping of ZnTe and its influence on CdTe∕ZnTe interfaces
Language: English
Date: 12 November 2021
Place of Publication: Darmstadt
Publisher: AIP Publishing
Journal or Publication Title: Applied Physics Letters
Volume of the journal: 90
Issue Number: 6
Collation: 3 Seiten
DOI: 10.26083/tuprints-00019883
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The properties of nitrogen doped ZnTe films and in situ formed heterointerfaces to CdTe were investigated using photoelectron spectroscopy and electrical measurements. The p doping of ZnTe with nitrogen is controlled during physical vapor deposition with an additional nitrogen plasma source. The resistivity was determined by four-point measurements and a minimum resistivity of ρ = 0.04 Ω cm was found. The valence band offset of the CdTe/ZnTe interface is EVBO = 0.05 eV.

Status: Publisher's Version
URN: urn:nbn:de:tuda-tuprints-198839
Classification DDC: 500 Science and mathematics > 530 Physics
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 12 Nov 2021 13:39
Last Modified: 13 Feb 2024 14:46
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19883
PPN: 503920851
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