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In situ preparation and interface characterization of TiO₂/Cu₂S heterointerface

Liu, Guangming ; Schulmeyer, T. ; Thissen, A. ; Klein, Andreas ; Jaegermann, Wolfram (2021)
In situ preparation and interface characterization of TiO₂/Cu₂S heterointerface.
In: Applied Physics Letters, 2003, 82 (14)
doi: 10.26083/tuprints-00019856
Article, Secondary publication, Publisher's Version

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Item Type: Article
Type of entry: Secondary publication
Title: In situ preparation and interface characterization of TiO₂/Cu₂S heterointerface
Language: English
Date: 2021
Place of Publication: Darmstadt
Year of primary publication: 2003
Publisher: AIP Publishing
Journal or Publication Title: Applied Physics Letters
Volume of the journal: 82
Issue Number: 14
DOI: 10.26083/tuprints-00019856
Corresponding Links:
Origin: Secondary publication service

The electronic structures and interface properties of the TiO₂/Cu₂S interface have been in situ studied after each growth step by x-ray and ultraviolet photoelectron spectroscopy. The p-doped Cu₂S films (BEVBM=0.1 eV) were grown on the highly n-doped chemical vapor deposition prepared TiO₂ (BEVBM=3.4 eV) films by thermal evaporation in a multistep growth procedure. The conduction band offset (0.7 eV), valence band offset (2.9 eV) and interface dipole (0.5 eV) were determined based on the quantitative examination of band bending occurring in the Cu2S films at higher coverage, leading to a staggered energy level configuration.

Status: Publisher's Version
URN: urn:nbn:de:tuda-tuprints-198567
Classification DDC: 500 Science and mathematics > 530 Physics
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 11 Nov 2021 13:25
Last Modified: 19 Jan 2023 12:47
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19856
PPN: 503874671
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