Liu, Guangming ; Schulmeyer, T. ; Thissen, A. ; Klein, Andreas ; Jaegermann, Wolfram (2021)
In situ preparation and interface characterization of TiO₂/Cu₂S heterointerface.
In: Applied Physics Letters, 2003, 82 (14)
doi: 10.26083/tuprints-00019856
Article, Secondary publication, Publisher's Version
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| Item Type: | Article |
|---|---|
| Type of entry: | Secondary publication |
| Title: | In situ preparation and interface characterization of TiO₂/Cu₂S heterointerface |
| Language: | English |
| Date: | 2021 |
| Place of Publication: | Darmstadt |
| Year of primary publication: | 2003 |
| Publisher: | AIP Publishing |
| Journal or Publication Title: | Applied Physics Letters |
| Volume of the journal: | 82 |
| Issue Number: | 14 |
| DOI: | 10.26083/tuprints-00019856 |
| Corresponding Links: | |
| Origin: | Secondary publication service |
| Abstract: | The electronic structures and interface properties of the TiO₂/Cu₂S interface have been in situ studied after each growth step by x-ray and ultraviolet photoelectron spectroscopy. The p-doped Cu₂S films (BEVBM=0.1 eV) were grown on the highly n-doped chemical vapor deposition prepared TiO₂ (BEVBM=3.4 eV) films by thermal evaporation in a multistep growth procedure. The conduction band offset (0.7 eV), valence band offset (2.9 eV) and interface dipole (0.5 eV) were determined based on the quantitative examination of band bending occurring in the Cu2S films at higher coverage, leading to a staggered energy level configuration. |
| Status: | Publisher's Version |
| URN: | urn:nbn:de:tuda-tuprints-198567 |
| Classification DDC: | 500 Science and mathematics > 530 Physics |
| Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Surface Science |
| Date Deposited: | 11 Nov 2021 13:25 |
| Last Modified: | 19 Jan 2023 12:47 |
| URI: | https://tuprints.ulb.tu-darmstadt.de/id/eprint/19856 |
| PPN: | 503874671 |
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