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Fermi-level-dependent defect formation in Cu-chalcopyrite semiconductors

Klein, Andreas ; Jaegermann, Wolfram (2021)
Fermi-level-dependent defect formation in Cu-chalcopyrite semiconductors.
In: Applied Physics Letters, 74 (16)
doi: 10.26083/tuprints-00019855
Article, Secondary publication, Publisher's Version

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Item Type: Article
Type of entry: Secondary publication
Title: Fermi-level-dependent defect formation in Cu-chalcopyrite semiconductors
Language: English
Date: 2021
Place of Publication: Darmstadt
Publisher: AIP Publishing
Journal or Publication Title: Applied Physics Letters
Volume of the journal: 74
Issue Number: 16
DOI: 10.26083/tuprints-00019855
Corresponding Links:
Origin: Secondary publication service

Valence-band photoelectron spectroscopy of CuInSe₂, CuInS₂, and CuGaSe₂ surfaces and interfaces give evidence for the formation of Cu vacancies when the Fermi level moves upwards in the band gap due to contact formation. The effect might be a key issue in understanding basic properties of solar cell devices based on these materials.

Status: Publisher's Version
URN: urn:nbn:de:tuda-tuprints-198554
Classification DDC: 500 Science and mathematics > 530 Physics
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 11 Nov 2021 13:23
Last Modified: 19 Jan 2023 12:46
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19855
PPN: 503874345
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