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Electronic passivation of Si(111) by Ga–Se half-sheet termination

Fritsche, R. ; Wisotzki, E. ; Islam, A. B. M. O. ; Thissen, A. ; Klein, Andreas ; Jaegermann, Wolfram ; Rudolph, R. ; Tonti, D. ; Pettenkofer, C. (2021)
Electronic passivation of Si(111) by Ga–Se half-sheet termination.
In: Applied Physics Letters, 2002, 80 (8)
doi: 10.26083/tuprints-00019835
Article, Secondary publication, Publisher's Version

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Item Type: Article
Type of entry: Secondary publication
Title: Electronic passivation of Si(111) by Ga–Se half-sheet termination
Language: English
Date: 2021
Place of Publication: Darmstadt
Year of primary publication: 2002
Publisher: AIP Publishing
Journal or Publication Title: Applied Physics Letters
Volume of the journal: 80
Issue Number: 8
DOI: 10.26083/tuprints-00019835
Corresponding Links:
Origin: Secondary publication service

A Si(111):GaSe van der Waals surface is prepared using sequential deposition of Ga and Se at elevated temperature on a Si(111)-7×7 surface. Surface properties were investigated by soft x-ray photoelectron spectroscopy and low-energy electron diffraction. The Si(111)-1×1:GaSe surface remains with electronic surface potentials near flatband condition.

Status: Publisher's Version
URN: urn:nbn:de:tuda-tuprints-198355
Classification DDC: 500 Science and mathematics > 530 Physics
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 08 Nov 2021 12:11
Last Modified: 17 Jan 2023 09:18
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19835
PPN: 503671517
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