Fritsche, R. ; Wisotzki, E. ; Islam, A. B. M. O. ; Thissen, A. ; Klein, Andreas ; Jaegermann, Wolfram ; Rudolph, R. ; Tonti, D. ; Pettenkofer, C. (2021):
Electronic passivation of Si(111) by Ga–Se half-sheet termination. (Publisher's Version)
In: Applied Physics Letters, 80 (8), pp. 1388-1390. AIP Publishing, ISSN 0003-6951, e-ISSN 1077-3118,
DOI: 10.26083/tuprints-00019835,
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Item Type: | Article |
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Origin: | Secondary publication service |
Status: | Publisher's Version |
Title: | Electronic passivation of Si(111) by Ga–Se half-sheet termination |
Language: | English |
Abstract: | A Si(111):GaSe van der Waals surface is prepared using sequential deposition of Ga and Se at elevated temperature on a Si(111)-7×7 surface. Surface properties were investigated by soft x-ray photoelectron spectroscopy and low-energy electron diffraction. The Si(111)-1×1:GaSe surface remains with electronic surface potentials near flatband condition. |
Journal or Publication Title: | Applied Physics Letters |
Volume of the journal: | 80 |
Issue Number: | 8 |
Place of Publication: | Darmstadt |
Publisher: | AIP Publishing |
Classification DDC: | 500 Naturwissenschaften und Mathematik > 530 Physik |
Divisions: | 11 Department of Materials and Earth Sciences > Material Science > Surface Science |
Date Deposited: | 08 Nov 2021 12:11 |
Last Modified: | 17 Jan 2023 09:18 |
DOI: | 10.26083/tuprints-00019835 |
Corresponding Links: | |
URN: | urn:nbn:de:tuda-tuprints-198355 |
URI: | https://tuprints.ulb.tu-darmstadt.de/id/eprint/19835 |
PPN: | 503671517 |
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