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Band offsets at the ZnSe/CuGaSe₂(001) heterointerface

Bauknecht, Andreas ; Blieske, U. ; Kampschulte, T. ; Albert, J. ; Sehnert, H. ; Lux-Steiner, Martha Ch. ; Klein, Andreas ; Jaegermann, Wolfram (2021):
Band offsets at the ZnSe/CuGaSe₂(001) heterointerface. (Publisher's Version)
In: Applied Physics Letters, 74 (8), pp. 1099-1101. AIP Publishing, ISSN 0003-6951, e-ISSN 1077-3118,
DOI: 10.26083/tuprints-00019834,

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Item Type: Article
Origin: Secondary publication service
Status: Publisher's Version
Title: Band offsets at the ZnSe/CuGaSe₂(001) heterointerface
Language: English

The formation of the ZnSe/CuGaSe₂ heterointerface was studied by x-ray photoelectron spectroscopy (XPS). ZnSe was sequentially grown on CuGaSe₂(001) epilayers. In situ photoemission spectra of the Ga 3d and Zn 3d core levels as well as XPS valence bands were acquired after each deposition step. The valence-band offset is determined to be ΔEV=0.6±0.1 eV. As a consequence, a nearly symmetric "type-I" band alignment for the ZnSe/CuGaSe₂ heterojunction with a conduction-band offset of ΔEC=0.4±0.1 eV is found. Concerning the band alignment ZnSe can, therefore, be expected to be a suitable buffer material for CuGaSe₂-based thin-film solar cells.

Journal or Publication Title: Applied Physics Letters
Volume of the journal: 74
Issue Number: 8
Place of Publication: Darmstadt
Publisher: AIP Publishing
Classification DDC: 500 Naturwissenschaften und Mathematik > 530 Physik
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 08 Nov 2021 12:10
Last Modified: 17 Jan 2023 09:17
DOI: 10.26083/tuprints-00019834
Corresponding Links:
URN: urn:nbn:de:tuda-tuprints-198349
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19834
PPN: 503669482
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