Band offsets at the ZnSe/CuGaSe₂(001) heterointerface

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Item Type:	Article
Type of entry:	Secondary publication
Title:	Band offsets at the ZnSe/CuGaSe₂(001) heterointerface
Language:	English
Date:	2021
Place of Publication:	Darmstadt
Year of primary publication:	1999
Publisher:	AIP Publishing
Journal or Publication Title:	Applied Physics Letters
Volume of the journal:	74
Issue Number:	8
DOI:	10.26083/tuprints-00019834
Corresponding Links:	Publisher-DOI
Origin:	Secondary publication service
Abstract:	The formation of the ZnSe/CuGaSe₂ heterointerface was studied by x-ray photoelectron spectroscopy (XPS). ZnSe was sequentially grown on CuGaSe₂(001) epilayers. In situ photoemission spectra of the Ga 3d and Zn 3d core levels as well as XPS valence bands were acquired after each deposition step. The valence-band offset is determined to be ΔEV=0.6±0.1 eV. As a consequence, a nearly symmetric "type-I" band alignment for the ZnSe/CuGaSe₂ heterojunction with a conduction-band offset of ΔEC=0.4±0.1 eV is found. Concerning the band alignment ZnSe can, therefore, be expected to be a suitable buffer material for CuGaSe₂-based thin-film solar cells.
Status:	Publisher's Version
URN:	urn:nbn:de:tuda-tuprints-198349
Classification DDC:	500 Science and mathematics > 530 Physics
Divisions:	11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited:	08 Nov 2021 12:10
Last Modified:	17 Jan 2023 09:17
URI:	https://tuprints.ulb.tu-darmstadt.de/id/eprint/19834
PPN:	503669482
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