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Band offset at the CuGaSe₂∕In₂S₃ heterointerface

Schulmeyer, T. ; Klein, Andreas ; Kniese, R. ; Powalla, Michael (2021)
Band offset at the CuGaSe₂∕In₂S₃ heterointerface.
In: Applied Physics Letters, 85 (6)
doi: 10.26083/tuprints-00019833
Article, Secondary publication, Publisher's Version

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Item Type: Article
Type of entry: Secondary publication
Title: Band offset at the CuGaSe₂∕In₂S₃ heterointerface
Language: English
Date: 2021
Place of Publication: Darmstadt
Publisher: AIP Publishing
Journal or Publication Title: Applied Physics Letters
Volume of the journal: 85
Issue Number: 6
DOI: 10.26083/tuprints-00019833
Corresponding Links:
Origin: Secondary publication service

We have investigated the electronic properties of the CuGaSe₂/In2S₃ heterointerface by photoelectron spectroscopy. In₂S₃ was evaporated by physical vapor deposition onto contamination free polycrystalline CuGaSe₂ surface prepared by the selenium decapping process. A valence band offset DEVB=0.78±0.1 has been determined.

Status: Publisher's Version
URN: urn:nbn:de:tuda-tuprints-198330
Classification DDC: 500 Science and mathematics > 530 Physics
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 08 Nov 2021 12:09
Last Modified: 17 Jan 2023 09:15
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19833
PPN: 503668540
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