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ZnS deposition onto bare and GaSe terminated Silicon-(111)-surfaces

Jäckel, Bengt ; Fritsche, Rainer ; Klein, Andreas ; Jaegermann, Wolfram (2021):
ZnS deposition onto bare and GaSe terminated Silicon-(111)-surfaces. (Publisher's Version)
In: AIP Conference Proceedings, 772 (1), pp. 153-154. AIP Publishing, ISSN 0094-243X, e-ISSN 1551-7616,
DOI: 10.26083/tuprints-00019829,

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Item Type: Article
Origin: Secondary publication service
Status: Publisher's Version
Title: ZnS deposition onto bare and GaSe terminated Silicon-(111)-surfaces
Language: English

The electronic properties and growth morphology of Si(111)/ZnS heterostructure modified by a GaSe van der Waals termination layer, which provides a chemical and an electronic passivation of the Si(111)‐surface is investigated by surface sensitive methods (STM, LEED and SXPS). The van der Waals termination layer suppresses the Si‐S interface reaction, which is observed for non terminated substrates. The interface electronic properties are nearly unchanged, but the morphology of the growing ZnS‐film is dramatically changed. With the passivation layer ZnS grows as orientated pyramides with a (111) base area surface orientaion and (100)‐facets. The sticking coefficient is reduced by a factor of ≈10 compared to bare Si(111), where ZnS grows as an untextured polycrystalline layer.

Journal or Publication Title: AIP Conference Proceedings
Book Title: AIP Conference Proceedings
Volume of the journal: 772
Issue Number: 1
Publisher: AIP Publishing
Classification DDC: 500 Naturwissenschaften und Mathematik > 530 Physik
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 05 Nov 2021 13:08
Last Modified: 05 Nov 2021 13:09
DOI: 10.26083/tuprints-00019829
Corresponding Links:
URN: urn:nbn:de:tuda-tuprints-198294
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/19829
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