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Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning

Poulain, Raphaël ; Proost, Joris ; Klein, Andreas (2022):
Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning. (Publisher's Version)
In: Physica status solidi (a), 216 (23), Wiley-VCH GmbH, ISSN 1862-6300, e-ISSN 1862-6319,
DOI: 10.26083/tuprints-00016726,
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Item Type: Article
Origin: Secondary publication DeepGreen
Status: Publisher's Version
Title: Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning
Language: English
Abstract:

Different magnetron sputtering‐based deposition methods of nickel oxide SiO₂‐passivated Si surfaces are compared. Results highlight that the presence of oxygen in the deposition chamber during reactive sputtering drastically affects the Si/SiO₂ interface. An alternative method for the preparation of NiO is the sputtering of metallic nickel in oxygen‐free atmosphere followed by a post oxidation of the deposited layer in an oxygen atmosphere without plasma exposition is proposed. This method is introduced as metal layer oxidation (MLO). Using this technique, the barrier height on n‐type silicon increases from ≈0.4 eV for reactively sputtered NiO to more than 0.6 eV for the MLO method. In situ photoelectron spectroscopy evidences the formation of an extra electronic state when NiO is reactively sputtered, which is assigned to the intense oxygen ion bombardment of the Si/SiO₂ surface during the process. This extra‐electronic state pins the silicon energy bands in an undesirable position. The extra‐electronic state is associated with oxygen interstitial in the SiO₂ implanted during reactive sputtering.

Journal or Publication Title: Physica status solidi (a)
Volume of the journal: 216
Issue Number: 23
Publisher: Wiley-VCH GmbH
Collation: 7 Seiten
Uncontrolled Keywords: Fermi-level pinning, interface passivation, NiO, photoemission, Si
Classification DDC: 500 Naturwissenschaften und Mathematik > 530 Physik
600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Electronic Structure of Materials (ESM)
Date Deposited: 07 Apr 2022 12:16
Last Modified: 07 Apr 2022 12:16
DOI: 10.26083/tuprints-00016726
Corresponding Links:
URN: urn:nbn:de:tuda-tuprints-167268
SWORD Depositor: Deep Green
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/16726
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