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High Dynamic Range THz Systems using ErAs:In(Al)GaAs Photoconductors

Nandi, U. and Faridi, F. R. and Fernandez Olvera, A. d. J. and Norman, J. C. and Lu, H. and Gossard, A. C. and Preu, S. (2020):
High Dynamic Range THz Systems using ErAs:In(Al)GaAs Photoconductors.
Bochum, Germany, In: 2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), pp. 115-117, DOI: 10.25534/tuprints-00011384,
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Item Type: Conference or Workshop Item
Title: High Dynamic Range THz Systems using ErAs:In(Al)GaAs Photoconductors
Language: English
Place of Publication: Bochum, Germany
Uncontrolled Keywords: aluminium compounds;erbium compounds;indium compounds;photoconducting devices;telecom lasers;absorption coefficient measurements;vector spectrometry;receiver noise equivalent power;continuous-wave operation;high dynamic range THz systems;photomixers;frequency 188.0 GHz;wavelength 1550.0 nm;gain 89.0 dB;ErAs:In(Al)GaAs;Receivers;Photoconducting materials;Measurement by laser beam;Absorption;Bandwidth;Dynamic range;Photonics;terahertz;photoconductor;telecom wavelength;continuous-wave;time domain spectroscopy;vector spectroscopy
Classification DDC: 500 Naturwissenschaften und Mathematik > 530 Physik
600 Technik, Medizin, angewandte Wissenschaften > 600 Technik
600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften
Divisions: 18 Department of Electrical Engineering and Information Technology > Terahertz Devices and Systems
Event Title: 2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
Date Deposited: 24 Jan 2020 08:17
Last Modified: 24 Jan 2020 08:17
DOI: 10.25534/tuprints-00011384
Related URLs:
URN: urn:nbn:de:tuda-tuprints-113845
Additional Information:

German Research Foundation (DFG) funding project 278381540 (REPHCON)

URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/11384
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