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Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width

Auth, Dominik and Liu, Songtao and Norman, Justin and Edward Bowers, John and Breuer, Stefan (2019):
Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width.
In: Optics Express, 27, (19), OSA Publishing, ISSN 1094-4087,
DOI: 10.25534/tuprints-00009667,
Secondary publishing via sponsored Golden Open Access, [Article]

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Item Type: Article
Origin: Secondary publishing via sponsored Golden Open Access
Title: Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width
Language: English
Abstract:

Mode-locked InAs/InGaAs quantum dot lasers emitting optical frequency combs centered at 1310 nm are promising sources for high-speed and high-capacity communication applications. We report on the stable optical pulse train generation by a monolithic passively mode-locked edge-emitting two-section quantum dot laser based on a five-stack InAs/InGaAs dots-in-a-well structure directly grown on an on-axis (001) silicon substrate by solid-source molecular beam epitaxy. Optical pulses as short as 1.7 ps at a pulse repetition rate or inter-mode beat frequency of 9.4 GHz are obtained. A minimum pulse-to-pulse timing jitter of 9 fs, corresponding to a repetition rate line width of 400 Hz, is demonstrated. The generated optical frequency combs yield exceptional low amplitude jitter performance and comb widths exceed 5.5 nm at a −3 dB criteria, containing more than 100 comb carriers.

Journal or Publication Title: Optics Express
Journal volume: 27
Number: 19
Publisher: OSA Publishing
Classification DDC: 500 Naturwissenschaften und Mathematik > 530 Physik
Divisions: 05 Department of Physics > Institute of Applied Physics > Semiconductor Optics Group
Date Deposited: 10 Dec 2019 13:22
Last Modified: 10 Dec 2019 13:22
DOI: 10.25534/tuprints-00009667
Related URLs:
URN: urn:nbn:de:tuda-tuprints-96679
URI: https://tuprints.ulb.tu-darmstadt.de/id/eprint/9667
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