• Publisher-DOI

Room temperature terahertz (THz) detectors based on Field effect transistors (FETs) and Zero-bias Schottky diodes (SD) are prominent members for the temporal-spatial characterization of pulses down to the picosecond scale generated at particle accelerators. Comparative study of in house developed THz detectors both at higher and intermediate frequency (IF) is carried out using table top THz systems and commercially available sources. In this paper, we present high frequency and intermediate frequency (IF) response of Gallium Arsenide (GaAs) FET and Zero-bias Schottky diode THz detectors. The IF results obtained are helpful for understanding and designing of optimized IF circuit with broader bandwidth.