Electronically Decoupled Films of InSe Prepared by van der Waals Epitaxy: Localized and Delocalized Valence States

Text
PhysRevLett.80.361.pdf
Copyright Information: In Copyright.
Download (248kB)

Item Type:	Article
Type of entry:	Secondary publication
Title:	Electronically Decoupled Films of InSe Prepared by van der Waals Epitaxy: Localized and Delocalized Valence States
Language:	English
Date:	2022
Place of Publication:	Darmstadt
Year of primary publication:	1998
Publisher:	American Physical Society
Journal or Publication Title:	Physical Review Letters
Volume of the journal:	80
Issue Number:	2
DOI:	10.26083/tuprints-00021182
Corresponding Links:	Publisher-DOI
Origin:	Secondary publication service
Abstract:	Submonolayer to several monolayer thick films of the layered semiconductor InSe were deposited on highly oriented pyrolytic graphite by van der Waals epitaxy and probed by energy dependent angle resolved photoelectron spectroscopy. The layers show a transition from two-dimensional bands with atomiclike states to molecularlike states localized along the c direction normal to the surface. The extended band structure showing band dispersion was observed for thicker films.
Status:	Publisher's Version
URN:	urn:nbn:de:tuda-tuprints-211821
Classification DDC:	500 Science and mathematics > 530 Physics 600 Technology, medicine, applied sciences > 620 Engineering and machine engineering
Divisions:	11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited:	22 Apr 2022 11:09
Last Modified:	09 Feb 2023 10:38
URI:	https://tuprints.ulb.tu-darmstadt.de/id/eprint/21182
PPN:	50446714X
Export:

Actions (login required)

View Item

OAI 2.0 -Basis-URL: https://tuprints.ulb.tu-darmstadt.de/cgi /oai2 TUprints verwendet EPrints 3 .